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Objectives

Fabrication of solid state emitters and detectors at THz frequencies

Materials: 

  • Narrow Bandgap (NBG) Semiconductors: InGaAs/AlInAs, InAs/AlSb, InSb/AlInSb
  • Wide Bandgap (WBG) Semiconductors: GaN/AlGaN

Novel Device Architectures:

  • Slot-diodes (Ungated, recessed HEMTs)
  • Rectifying nano diodes (nano-channels with broken symmetry, so called self-switching diodes, SSDs)

SSD

Slot Diode

Novel Physics:
  • Gunn oscillations in GaN
  • Ultra-fast Gunn oscillations in slot-diodes