Fabrication of solid state emitters and detectors at THz frequencies

Materials: 

• Narrow Bandgap (NBG) Semiconductors: InGaAs/AlInAs, InAs/AlSb, InSb/AlInSb
• Wide Bandgap (WBG) Semiconductors: GaN/AlGaN

Novel Device Architectures:

• Slot-diodes (Ungated, recessed HEMTs)
• Rectifying nano diodes (nano-channels with broken symmetry, so called self-switching diodes, SSDs)

• Gunn oscillations in GaN
• Ultra-fast Gunn oscillations in slot-diodes