USAL: Salamanca University (Spain)

Semiconductor Devices Research Group:

Contact: Javier Mateos (

More partner information

Salamanca University (, dating back to 1218, is the oldest and also one of the most prestigious universities in Spain. The university has more than 30,000 students per year, of which approximately 4,000 come from abroad, and is the main economic and cultural force for the town of Salamanca and its population of only 170,000 people. Even if the main strength of Salamanca University is Humanistic Studies, in the last decades big efforts and investments have been made to (successfully) promote research and education in Science and Technology. USAL will be in charge of the coordination of the project (thus leading WP5).

Additionally, the main tasks attributed to USAL in the project will be to develop the appropriate models and perform Monte Carlo simulations of SSDs and slot-diodes (based on NBG and WBG semiconductors) in order, first, to well understand the physics of the THz emission and detection, and, second, to provide feedback to the design process in order to optimize the practical application of the devices. USAL will lead WP1 (Modelling).

The Semiconductor Devices Research Group (SDRG, at USAL has almost 20 year experience in the field of modelling and simulation of semiconductor materials and electronic devices, mainly using Monte Carlo techniques. During these years, many different systems of increasing complexity have been analyzed, going from semiconductor materials (Si, GaAs, InP, SiGe, AlGaAs, GaInAs, AlInAs) to one-port (n+nn+ structures, Schottky, pn and heterostructure diodes) and two-port (MESFETs, BJTs, HBTs, MOSFETs and HEMTs) electronic devices. The Monte Carlo programs developed for the analysis of these devices allow the study of both their static and dynamic performance, and also the noise characteristics. This research work has been performed in collaboration with several prestigious European Laboratories. In the past years, a significant activity in the field of modelling of advanced heterojunction devices has been developed; in particular, successful results have been obtained in the modelling of static, dynamic and noise behaviour of ultrashort gate-length InGaAs/AlInAs and GaN/AlGaN HEMTs, T- and Y-shaped nanojunctions, ballistic rectifiers and SSDs.

Resources to be committed: In order to perform these tasks the group has exclusive access to computer clusters able to run more than 100 sequential simulations simultaneously.

Staff members undertaking the work: J. Mateos and T. González will lead the human resources made available by the experienced research group at USAL: 2 Full Professors, 2 Associate Professors and 1 Research Assistant. Additionally, a Postdoc will be employed in the project, to be mainly engaged in the design of optimized emitters and detectors to be fabricated in Run 2 of WP2 and the emitter/detector subsystem to be fabricated in WP4.

Dr. Javier Mateos: Associate Professor at USAL, has been working with the SDRG since 1993, and during one year he was at the IEMN. He has authored or co-authored more than 70 scientific papers in international refereed journals and more than 100 presentations (12 invited talks) in international conferences. Prof. Tomás González: Full Professor at USAL, he has been working with SDRG since 1990. He is author orco-author of more than 110 scientific articles in refereed journals and more than 130 presentations (17 invited talks) in international conferences. He serves on the Committees of several international conferences (ICNF, EDISON).