CHAL: Chalmers University of Technology (Sweden)

Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience (MC2): www.chalmers.se/mc2

Contact: Jan Grahn (jan.grahn@chalmers.se)

More partner information

CHAL (www.chalmers.se) Chalmers University of Technology is Sweden’s second largest technical university founded 1829. Chalmers carries out research and education at B.Sc., M.Sc. and Ph.D. level at sixteen different programs in engineering and architecture. Around 2100 people are working at Chalmers of which 1,400 are teachers and researchers. Almost 6, 000 undergraduate students and 900 Ph.D. students are active at Chalmers.

The main tasks attributed to CHAL in the project are:

In the field of RF/microwave/mm-wave and THz technology, Chalmers is a leading academic research and education institution. Many projects are run in close collaboration with national and international industrial actors. Research areas address ultra-low noise (InP and Sb HEMT) technology, wide-bandgap (GaN HEMT) technology, power amplifier design for base stations, THz technology, MMIC design, quantum devices, superconducting electronics, THz receiver systems, wideband and multi-functional antennas, device and antenna measurements, biomedical engineering, and wireless communication systems. In particular, Chalmers is carrying out research on THz components, sources and antennas of large background value for the proposed ROOTHZ project.

Resources to be committed:

Staff members undertaking the work: Prof. J. Grahn and Dr. P. A. Nilsson will lead the work on this project, in which 1 PhD student and 3 engineers will be involved in MBE growth, processing and characterization.

Prof. Jan Grahn: is Deputy Head for the Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience (MC2). He is also leading GigaHertz Centre, a joint research venture between Chalmers University and industry in high-frequency components. He is also involved in the research on narrow-bandgap HEMT devices based on InGaAs/InAlAs and InAs/AlSb heterojunctions.

Dr. Per-Ĺke Nilsson, MC2: is responsible for the narrow-bandgap and wide bandgap process flow development at the Nanotechnology Laboratory at MC2.